DESCRIPTION
RIE Plasma Asher is a dry - type plasma photoresist stripping device, suitable for the photoresist removal and ashing processes of wafers with a diameter of 8 inches or less. NE-RE08 employs a high - density RIE plasma etching system and offers performance advantages such as a fast photoresist stripping rate, good uniformity, high selectivity ratio, and excellent anisotropy.
Applications:
Strip positive/negative photoresists on 8 - inch or smaller wafers (SOI, Si, glass, copper, etc.)
Strip polyimide (PI) photoresist
Remove organic substances
PR Descum primer process post - lithography
Plasma - activate substrate surface (O₂/Ar)
Features:
RIE mode for fast resist stripping
Full - area gas showerhead and radial exhaust for high uniformity and speed
Water - cooled electrode controls substrate temperature
Pneumatic lid for easy wafer handling
PARAMETER
Enclosure | Dimensions | W670×D700×H1400(mm) |
Weight | 300KG(Including vacuum pump) | |
Plasma Generator | Frequency | 13.56Mh |
Power | 600W(Adjustable) | |
Chamber | Material | 316 stainless steel |
Workbench size | Φ260m | |
Etching Method | RIE | |
Process Control | Gas Flow Controller | MFC |
Flow Value | 0-300sccm | |
Gas Channel | 2 | |
Interface | 10’’with recipe store+PLC | |
Services | Electrical | AC220, 50–60Hz |
Power Cord | Suited to region |
PRODUCT FEATURES
Fast Deposition Rate
Good Film Quality
Process Stability
High Productivity
Fully Automatic
Simple Operation
Plasma
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