RIE Plasma Asher NE-RE08 is an advanced dry plasma system engineered for high-efficiency photoresist removal and ashing processes across 2-inch to 8-inch wafers. Incorporating a high-density RIE (Reactive Ion Etching) plasma source, it delivers exceptional performance characterized by rapid stripping rates, outstanding uniformity, high selectivity, and well-controlled anisotropy.

Features

1. RIE-Enhanced Processing: Leverages Reactive Ion Etching mode for high-speed and precise photoresist stripping.

2. Uniform Flow Design: Integrated full-area gas showerhead and axisymmetric pumping system ensure optimal process consistency and throughput.

3. Active Temperature Management: Water-cooled electrode system maintains stable substrate temperature for process repeatability.

4. Ergonomic Accessibility: Front-opening design allows quick and safe wafer handling with minimal downtime.

Applications

1. Photoresist stripping (positive/negative) on substrates up to 8 inches, including SiO₂, SOI, silicon, glass, and copper

2. Polyimide (PI) photoresist removal

3. Organic residue elimination

4. Post-lithography descum and bottom-layer cleaning

5. Surface activation treatment using O₂/Ar plasma