NE-PE13FH (RF) Plasma Ashing Machine
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DESCRIPTION

Plasma Ashing Machine is a specialized device used to remove surface adhesive layers or polymer substances from materials. It uses plasma generated by high-frequency electric fields for chemical reactions, converting various polymer substances into easily manageable low molecular weight substances to achieve the purpose of ashing. This process is commonly known as ashing process. Radio frequency plasma ashing technology is an efficient and environmentally friendly ashing method that does not require the use of chemical solvents and water, and can effectively avoid pollution and waste disposal problems. Radio frequency plasma ashing machine usually includes radio frequency power supply, reaction chamber, gas control system, and vacuum system. The radio frequency power supply is used to generate high-frequency electric field, the reaction chamber is the place where plasma is generated, the gas control system is used to control the type and flow of reaction gas, and the vacuum system is used to maintain the low-pressure environment inside the chamber, promote the formation of plasma and the progress of chemical reactions. The machine vacuum chamber is equipped with several electrode plates, which can be used for small-scale ashing and improve production efficiency.

RF Plasma Ashing Machine is suitable for various substrates such as glass, metal seed layer, silicon wafer, piezoelectric ceramics, etc. Plasma bombardment can not only remove the residual glue on the surface, but also activate the substrate and improve its surface hydrophilicity. The use of gas ionization to bombard and remove photoresist ensures the integrity of the device. The RF plasma ashing machine is suitable for various substrates such as glass, metal seed layers, silicon wafers, piezoelectric ceramics, etc. Through plasma bombardment, not only can residual glue on the surface be removed, but the substrate can also be activated to improve its surface hydrophilicity.

NE-PE13FH is widely used in scientific research institutions, enterprise R&D units and small batch production proofing, including:

  • Plasma cleaning organics

  • Plasma surface activation to improve adhesion

  • Wafer cleaning

  • Descum for WLP

  • Stripping & Etch for WLP

  • Wafer pre-treatment

  • BCB & UBM adhesion

  • Dielectric patterning

  • Via cleaning for WLP

PARAMETER

EnclosureGeometry640 (W) × 665 (D) × 580(H) MM
Plasma Generator
Frequency13.56 MHz, automatic impedance matching
Power

0-300W (adjustable)

ChamberMaterial

316 stainless steel

Dimensions240 (L) × 280 (W) × 200 (H) MM
Volume13 L
Processing layers3 layers

Processing area

204.5 (W) × 210 (D) × 30 (H) MM

Process Control

Gas flow controller

MFC

Gas channels

2 channels, support O₂, Ar, N₂, and H₂, etc
Vacuum gaugePirani
Interface7'' touch screen + PLC
ServicesElectricalAC220, 50–60Hz
Power cordSuited to region


PRODUCT FEATURES

01

Fast Deposition Rate

Fast Deposition Rate

02

Good Film Quality

Good Film Quality

03

Process Stability

Process Stability

04

High Productivity

High Productivity

05

Fully Automatic

Fully Automatic

06

Simple Operation

Simple Operation

INDUSTRY APPLICATION

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