DESCRIPTION
Plasma Ashing Machine is a specialized device used to remove surface adhesive layers or polymer substances from materials. It uses plasma generated by high-frequency electric fields for chemical reactions, converting various polymer substances into easily manageable low molecular weight substances to achieve the purpose of ashing. This process is commonly known as ashing process. Radio frequency plasma ashing technology is an efficient and environmentally friendly ashing method that does not require the use of chemical solvents and water, and can effectively avoid pollution and waste disposal problems. Radio frequency plasma ashing machine usually includes radio frequency power supply, reaction chamber, gas control system, and vacuum system. The radio frequency power supply is used to generate high-frequency electric field, the reaction chamber is the place where plasma is generated, the gas control system is used to control the type and flow of reaction gas, and the vacuum system is used to maintain the low-pressure environment inside the chamber, promote the formation of plasma and the progress of chemical reactions. The machine vacuum chamber is equipped with several electrode plates, which can be used for small-scale ashing and improve production efficiency.
RF Plasma Ashing Machine is suitable for various substrates such as glass, metal seed layer, silicon wafer, piezoelectric ceramics, etc. Plasma bombardment can not only remove the residual glue on the surface, but also activate the substrate and improve its surface hydrophilicity. The use of gas ionization to bombard and remove photoresist ensures the integrity of the device. The RF plasma ashing machine is suitable for various substrates such as glass, metal seed layers, silicon wafers, piezoelectric ceramics, etc. Through plasma bombardment, not only can residual glue on the surface be removed, but the substrate can also be activated to improve its surface hydrophilicity.
Plasma cleaning organics
Plasma surface activation to improve adhesion
Wafer cleaning
Descum for WLP
Stripping & Etch for WLP
Wafer pre-treatment
BCB & UBM adhesion
Dielectric patterning
Via cleaning for WLP
PARAMETER
Enclosure | Geometry | 640 (W) × 665 (D) × 580(H) MM |
Plasma Generator | Frequency | 13.56 MHz, automatic impedance matching |
Power | 0-300W (adjustable) | |
Chamber | Material | 316 stainless steel |
Dimensions | 240 (L) × 280 (W) × 200 (H) MM | |
Volume | 13 L | |
Processing layers | 3 layers | |
Processing area | 204.5 (W) × 210 (D) × 30 (H) MM | |
Process Control | Gas flow controller | MFC |
Gas channels | 2 channels, support O₂, Ar, N₂, and H₂, etc | |
Vacuum gauge | Pirani | |
Interface | 7'' touch screen + PLC | |
Services | Electrical | AC220, 50–60Hz |
Power cord | Suited to region |
PRODUCT FEATURES
Fast Deposition Rate
Good Film Quality
Process Stability
High Productivity
Fully Automatic
Simple Operation
Plasma
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