The NE-PE13FH is a 13-liter desktop RF plasma asher designed for laboratory and light-production semiconductor processing. Operating at 13.56 MHz with 0–300W continuously adjustable power, it delivers efficient oxygen plasma ashing, argon-based surface preparation, and multi-gas process chemistry through dual mass flow controller-regulated gas channels. It uses plasma generated by high-frequency electric fields for chemical reactions, converting various polymer substances into easily manageable low molecular weight substances to achieve the purpose of ashing. This process is commonly known as ashing process. Radio frequency plasma ashing technology is an efficient and environmentally friendly ashing method that does not require the use of chemical solvents and water, and can effectively avoid pollution and waste disposal problems. Radio frequency plasma ashing machine usually includes radio frequency power supply, reaction chamber, gas control system, and vacuum system. The radio frequency power supply is used to generate high-frequency electric field, the reaction chamber is the place where plasma is generated, the gas control system is used to control the type and flow of reaction gas, and the vacuum system is used to maintain the low-pressure environment inside the chamber, promote the formation of plasma and the progress of chemical reactions. The machine vacuum chamber is equipped with several electrode plates, which can be used for small-scale ashing and improve production efficiency.

RF Plasma Ashing Machine is suitable for various substrates such as glass, metal seed layer, silicon wafer, piezoelectric ceramics, etc. Plasma bombardment can not only remove the residual glue on the surface, but also activate the substrate and improve its surface hydrophilicity. The use of gas ionization to bombard and remove photoresist ensures the integrity of the device. The RF plasma ashing machine is suitable for various substrates such as glass, metal seed layers, silicon wafers, piezoelectric ceramics, etc. Through plasma bombardment, not only can residual glue on the surface be removed, but the substrate can also be activated to improve its surface hydrophilicity.

Key Features

RF 13.56 MHz for High-Efficiency Ashing and Multi-Process Capability

0–300W Continuously Variable Power for Precise Process Control

13L Chamber with 3-Shelf Loading — Supports Wafers Up to 8

Dual MFC Gas Channels for Multi-Gas Process Chemistry

PLC with 7-inch Touchscreen — Recipe-Based Automated Operation

Compact Single-Phase Desktop Footprint

CE Certified for International Laboratory Compliance

Applications

1. Semiconductor Photoresist Stripping
   

2. Wafer Descum Before Metallization and Deposition
   

3. WLP Process Integration — Via, BCB, UBM
   

4. MEMS Fabrication
   

5. PDMS Bonding and Microfluidics

6. PCB and Advanced Electronics Preparation
   

For photoresist stripping, WLP process support, MEMS ashing, or application-specific plasma recipe development, contact the NAEN Technology applications team or request a sample test service.