The NE-Q05H is a compact, laboratory-grade vacuum plasma cleaner that combines a high-purity quartz reaction chamber with an inductively coupled plasma (ICP) discharge mechanism and a solid-state 13.56 MHz RF power supply. Operating at low pressure, it delivers high-density, chemically active plasma to clean and activate the surfaces of polymers, metals, glass, and ceramics — without introducing any metallic contamination from electrodes.

With a 5-liter quartz chamber, dual independent gas inlet channels, and fully automated process control, the NE-Q05H is suited for R&D laboratories, university research, semiconductor fabrication support, and precision manufacturing applications where surface cleanliness and adhesion performance are critical.

Key Features

ICP High-Density PlasmaThe inductively coupled discharge generates a high-density, uniform plasma across the entire 5L chamber volume. High radical concentration and ion density ensure fast, thorough treatment of all surfaces within the process area.

Electrode-Free Contamination-Free DesignWith no internal metal electrodes, the NE-Q05H avoids one of the most common failure modes of conventional plasma cleaners — metallic sputtering contamination. Critical for semiconductor, optoelectronic, and biomedical applications where trace metal contamination is unacceptable.

Quartz Chamber with Full RF TransparencyThe quartz reaction vessel provides complete RF transparency for efficient inductive coupling, combined with chemical inertness to all standard plasma process gases. Visual monitoring of the plasma during operation is possible through the transparent chamber wall.

Dual Independent Gas ChannelsTwo separate gas inlets allow independent control of gas flow rates for single-gas operation or real-time mixed-gas blending. This enables a wide range of process chemistries — from pure oxygen plasma for organic removal to argon/oxygen mixtures for combined physical-chemical activation — without any hardware reconfiguration.

Automated Process Control with Data LoggingThe integrated control system supports programmable recipes covering power level, process time, gas flow rates, and pressure setpoints. All process parameters are displayed in real-time, recorded to internal memory, and can be retrieved at any time for process validation, traceability, and quality records.

Low-Temperature ProcessingDespite its high plasma density, the ICP discharge maintains substrate temperatures well below the threshold for damage to heat-sensitive materials. Polymers, flexible circuits, MEMS structures, and biological samples can all be processed without thermal distortion.

Applications

The NE-Q05H is used across a wide range of laboratory, R&D, and precision manufacturing applications:

PDMS Bonding and MicrofluidicsOxygen plasma treatment of PDMS (polydimethylsiloxane) and glass substrates is the standard method for achieving permanent, leak-proof bonds in microfluidic devices. The NE-Q05H delivers uniform, high-density oxygen plasma precisely tuned for PDMS surface activation without over-etching.

Semiconductor and Wafer PreparationPre-clean silicon wafers, compound semiconductor substrates, and device wafers to remove organic and particulate contamination prior to deposition, lithography, or bonding. The electrode-free quartz chamber prevents the metal contamination that would compromise electrical device performance.

Photoresist Stripping and AshingHigh-power oxygen plasma efficiently strips photoresist layers and cross-linked polymers from wafer surfaces after lithography or etching steps. The NE-Q05H's 0–200W adjustable power allows the ashing rate to be precisely controlled.

Surface Activation for Adhesive BondingTreat low-surface-energy substrates — including PTFE, PP, PE, PET, PEEK, and silicone — to dramatically increase surface energy and wetting, enabling strong, durable bonds with adhesives, epoxies, and encapsulants that would otherwise fail on untreated surfaces.

SEM and TEM Sample PreparationRemove hydrocarbon contamination layers from electron microscopy samples and specimen holders before loading into SEM, TEM, or FIB instruments. The downstream/remote-mode capability (low bombardment energy) is particularly suitable for fragile or beam-sensitive samples.

Wire Bonding and PCB PreparationClean bond pad surfaces on PCBs, ceramic substrates, and lead frames immediately before wire bonding or soldering to remove oxide layers and organic residues that reduce bond strength and reliability.

Optical Component CleaningRemove adsorbed organic films from lens surfaces, waveguides, and optical coatings without the risk of scratching or chemical attack that would result from solvent or mechanical cleaning methods.

Biomedical Device Surface ModificationActivate polymer surfaces on medical implants, diagnostic devices, microwell plates, and cell culture substrates to promote cell adhesion, protein adsorption, or hydrophilic wettability modification.

Why 13.56 MHz RF Power?

The NE-Q05H operates at the internationally standardized 13.56 MHz ISM radio frequency. This is the same frequency used in semiconductor-grade plasma processing equipment, and it offers critical performance advantages over lower-frequency (40 kHz) plasma systems commonly found in entry-level units:

• At equivalent power, 13.56 MHz systems ionize gas molecules far more efficiently than 40 kHz systems, producing significantly higher plasma density and reactive species concentration

• Higher frequency RF reduces ion bombardment energy at the substrate surface, minimizing the risk of UV-induced or ion-induced damage to sensitive samples

• Automatic impedance matching (included) continuously optimizes the power transfer between the RF generator and the plasma load, ensuring stable, repeatable plasma conditions throughout the process cycle

Why a Quartz Chamber?

The choice of chamber material directly determines the cleanliness and repeatability of plasma processing. The NE-Q05H uses a high-purity fused quartz (SiO₂) vacuum chamber for several important reasons:

RF Transparency — Quartz is electrically non-conductive and highly transparent to radio-frequency energy, allowing RF power to couple directly and efficiently into the gas volume without signal loss or electrode interference. This is a fundamental requirement for the ICP discharge mode used in this system.

Zero Metallic Contamination — Unlike stainless steel chambers with internal metal electrodes, a quartz chamber produces no sputtered metal particles. For semiconductor samples, TEM/SEM specimen grids, optical coatings, and biomedical substrates, even trace-level metal contamination is unacceptable. The quartz chamber eliminates this risk entirely.

Chemical Resistance — Quartz withstands the full range of process gases commonly used in plasma cleaning — oxygen, argon, nitrogen, hydrogen, CF₄, and mixed gases — without reacting or degrading, ensuring long service life and consistent process chemistry.

High-Temperature Resistance — Fused quartz tolerates sustained operating temperatures well above the plasma process range, maintaining structural integrity and dimensional stability over time.

Easy Inspection and Cleaning — The transparent quartz chamber allows visual monitoring of the plasma discharge during operation and can be cleaned quickly between process runs without disassembly.

Get a quote

For application-specific process parameters, sample test services, or customization requirements, contact the NAEN Technology team. We offer sample testing prior to purchase and customized system configurations for specialized applications.