Low-pressure Desktop Plasma Cleaner NE-Q05H
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DESCRIPTION

Desktop Plasma Cleaner is a small quartz vacuum plasma cleaner which is dedicated to cleaning and surface activation of a wide range of materials including polymers, metals, glass and ceramics, delivering optimum adhesion properties of otherwise difficult to bond materials.

NE-Q05H uses ICP plasma generation method, which has the characteristics of high plasma density and high dissociation rate. There is no electrode inside the vacuum chamber, which can avoid sputtering pollution. 

Quart glass is selected as the vacuum chamber material. Quartz glass is easy to clean, high temperature resistant, has certain strength, and RF power can be completely transmitted. It is an ideal vacuum chamber material. 

2 independent inflatable pipeline. The multi-channel inflatable design can not only be flexibly filled with a single channel of different medium gases, but also can be filled with mixed gases, which is convenient for the later cleaning process. 

The control system includes automatic process control, data acquisition and recording, security chain protection and other functions. The process parameters ( cleaning power, time, etc. ) can be set or modified, and the parameters in the process can be displayed and recorded at the same time. The historical data can be called and consulted at any time.

The Q05H Desktop Plasma Cleaner utilizes Inductively Coupled Plasma (ICP) to deliver high-density, low-damage plasma for advanced surface treatment applications. It is optimized for deep cleaning, residue removal, and pre-treatment in microelectronics and material science fields.

Applications

  • Semiconductor wafer post-etch residue removal

  • MEMS packaging and TSV cleaning

  • Advanced material research surface conditioning

  • Sub-10nm cleaning and nano-coating prep

Advantages

  • ICP source provides higher plasma density and uniformity

  • Suitable for high-aspect ratio structures

  • Supports fluorine-based gases for etching

  • Multi-step process recipe control

Working Process

  1. Substrate placed inside the ICP chamber

  2. Vacuum pressure reduced to ≤20 Pa

  3. ICP and RF sources ignite high-density plasma

  4. Plasma reacts with surface contaminants or modifies surface energy

  5. Sample is removed after treatment

Technical Specifications

  • Chamber size: 150 × 150 mm

  • RF Power: 0–300 W

  • Vacuum: ≤20 Pa

  • Supported gases: O₂, Ar, CF₄, SF₆

  • Plasma type: RF + ICP

PARAMETER

EnclosureDimensions510 (L)×480 (W) × 540 (H) MM
Plasma GeneratorPower0-300W (adjustable)
Frequency13.56 Mhz, Solid-state RF power supply
ChamberMaterialQuartz
Discharge modeICP
Volume4.7 L
Processing area126 (W) × 250 (D) MM
Chamber size150 (W) × 270(D) MM
Process ControlGas flow controllerMFC
Pressure gaugePirani
Gas channel2 channels, support Oxygen, Argon, etc
Control modePLC + 4.3'' touch screen
Services
ElectricalAC220V, 50–60Hz
Power cordSuited to region


PRODUCT FEATURES

01

Fast Deposition Rate

Fast Deposition Rate

02

Good Film Quality

Good Film Quality

03

Process Stability

Process Stability

04

High Productivity

High Productivity

05

Fully Automatic

Fully Automatic

06

Simple Operation

Simple Operation

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