The NE-RE04A reactive ion etching machine is a precision dry etching experimental equipment specially designed for university research institutes, semiconductor laboratories, and micro/nano device research and development enterprises. It relies on RIE reactive ion etching technology and combines the dual effects of physical ion bombardment and chemical plasma reaction to achieve high-precision micro/nano scale pattern etching in a vacuum low-pressure environment. It is a microelectronic MEMS、 The core equipment for process experiments and small batch sample processing in the fields of optoelectronics and new material research and development.

The device mainly consists of a reaction chamber module, a temperature control module, a pressure control module, a process gas flow control module, and an RF power control module. In the process experiment, the material to be etched is placed on the wafer stage, and the water cooling system is used to cool the temperature of the wafer stage. The process gas is uniformly introduced through the action of a uniform gas disk. Then, the RF connector is effectively connected to the electrodes inside the chamber, thus forming the basic environment inside the RIE chamber. The basic principle of its etching reaction is that the reaction occurs inside the reaction chamber, and flat electrodes are integrated at the upper and lower ends of the reaction chamber. When a high-frequency voltage of 13.56MHz is applied between the electrodes, a few hundred micron thick ion layer will be generated, and the reaction etching will be completed by high-speed ion impact on the sample inside the reaction chamber.

Main application: Mainly used for etching of dielectric materials (SiO2, SiNx, etc.), silicon-based materials (Si, a-Si, polySi), organic materials (PR PMMA HDMS) and organic films. Other: surface cleaning, activation, modification, etc.