Plasma Etching Cleaner NE-RIE01 is a precision material removal process that selectively patterns substrate surfaces using protective masks. The technology relies on controlled ion bombardment in a plasma environment, where strategic gas selection enables higher etch rates on target materials than on mask materials. This fundamental semiconductor manufacturing process enables precise pattern transfer at microscopic scales.

Plasma Etching Cleaner NE-RIE01 delivers advanced reactive ion etching (RIE) for semiconductor microfabrication. This compact dry etching solution combines operational simplicity with exceptional process repeatability, offering rapid etching speeds, outstanding uniformity, superior selectivity, and well-controlled anisotropy through optimized RIE plasma technology.

Features

1. Advanced RIE Configuration: Enables high-selectivity anisotropic etching for demanding semiconductor processes

2. Uniform Flow Architecture: Full-area gas showerhead with axisymmetric exhaust ensures consistent etching uniformity and efficiency

3. Precision Thermal Management: Combined heating and lower electrode cooling maintains stable process temperature for consistent etch rates

4. Optimized RF Performance: 13.56MHz solid-state RF power with automatic impedance matching ensures optimal plasma density and process repeatability

5. Flexible Gas Delivery: Three independent gas channels with high-precision mass flow controllers support diverse process requirements

Application

1. Material Etching: Silicon (Si), Silicon Dioxide (SiO₂), Silicon Nitride (SiN), Polysilicon, Gallium Arsenide (GaAs), Molybdenum (Mo), Platinum (Pt), polyimide and related materials

2. Surface Modification: Photoresist ashing, hydrophilic/hydrophobic treatment, surface energy enhancement, functional group introduction, and biocompatibility improvement