DESCRIPTION
Microwave Plasma Treatment System consists of five parts: shell frame system, microwave discharge system, vacuum system, gas supply system and control system. The NE-MW70 is controlled by industrial computer + PLC, and the operation mode includes automatic mode and manual mode. In automatic mode, different process parameters are managed according to the recipe method, and 50 groups of different recipes can be stored at the same time. The equipment is designed with safety functions such as working gas exhaustion alarm, compressed air pressure lower than the set value alarm, pump thermal overload alarm, and reaction chamber leakage rate excessive alarm.
NE-MW70 is a large industrial vacuum microwave plasma processing system. Excited by 2.45 GHz microwaves, it generates plasma without electrodes, with low self-bias and minimal ion impact, ideal for sensitive device cleaning. It offers high-efficiency, non-destructive surface cleaning, activation, modification, deoxidation, and photoresist stripping.
Microwave Plasma Treatment System is a green and pollution-free high-precision dry cleaning method that can effectively remove surface contaminants and avoid electrostatic damage. Compared with plasma generated by low-frequency or radio frequency discharge, microwave plasma cleaning has the following advantages:
No internal electrodes, which can avoid discharge pollution, high energy conversion efficiency, and can produce a large range of high-density plasma;
Non-destructive process, extremely small self-bias;
High electron density, fast preparation rate of various functional thin film materials;
Small ion impact, little damage to devices;
No ultraviolet radiation.
Because of the above advantages, microwave plasma is irreplaceable in some processes, such as degumming and cleaning in the process of some electrically sensitive devices. Due to the high excitation frequency, small ion kinetic energy, and the chemical plasma effect that accounts for the main part in microwave plasma, more uniform and effective cleaning can be achieved. There is no physical impact and sputtering caused by physical plasma during cleaning. In the process of cleaning of devices with high reliability requirements, especially sensitive circuits, microwave plasma cleaning machines have become the key and preferred equipment.
Applications:
Semiconductor chip substrate cleaning and pre - packaging treatment.
Wafer film removal, de - bonding, activation.
MEMS sacrificial layer removal.
Material surface cleaning, activation, and modification.
PARAMETER
Enclosure | Dimensions | 1240(W)×1200(D) ×1800(H) mm |
Weight | 350KG (Including vacuum pump) | |
Plasma Generator | Frequency | 2.45GHz |
Power | 0-1000W (Adjustable) | |
Chamber | Material | Aviation-grade aluminum alloy |
Form | Cylindrical | |
Volume | 73L | |
Dimensions | 390(W)*470(D)*400(H)mm | |
Process Control | Gas Flow Controller | MFC |
Flow Value | 0-500 SCC | |
Vacuum Gauge | Pirani | |
Interface | 10” with recipe store+PLC | |
Services | Electrical | AC220, 50–60Hz |
Power Cord | Suited to region |
PRODUCT FEATURES
Fast Deposition Rate
Good Film Quality
Process Stability
High Productivity
Fully Automatic
Simple Operation
RELATED PRODUCTS
Plasma
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