DESCRIPTION
The NE-Q15 Inductively Coupled Plasma (ICP) Cleaner utilizes an RF power supply to generate high-density plasma by inductively coupling energy into process gases within a quartz chamber. The ICP source maintains stable plasma density even at low operating pressures, significantly minimizing substrate exposure to high-energy ion bombardment. Engineered with a high-purity quartz glass reaction chamber, the system ensures an ultraclean processing environment. Its electrode-free design fundamentally eliminates contamination risks associated with electrode sputtering.
Cleaning: Effective removal of organic residues, oxides, metal salts, and nanoscale particulate contaminants.
Activation: Surface modification including hydrophilicity/hydrophobicity control, adhesion promotion, surface energy enhancement, functional group incorporation, and biocompatibility improvement.
Etching: Precision surface patterning, micro-etching, and controlled modification of surface topography and roughness.
Bonding: Surface activation for PDMS microfluidic device assembly and wafer-level bonding preparation.
Photoresist Stripping: Complete photoresist ashing and bottom-layer residue removal.
PARAMETER
| ENCLOSURE | Dimensions | 755 × 880 × 1580 mm(L × W × H) |
PLASMA POWER SUPPLY | Power | 0-500W, continuously variable output |
| Frequency | 13.56MHz | |
CHAMBER | Material | Quartz |
| Dimensions | 250 × 300 mm (Φ × H), 14.7L | |
| Effective Processing Area | 240 × 280 mm (Φ × H) | |
PROCESS CONTROL | Interface | PLC with 7'' Touch Screen HMI |
| Gas Channels | x2 MFC, compatible with O₂, Ar, N₂, H₂, etc. | |
| Pressure Gauge | Pirani Sensor | |
SERVICES | Electrical | 210-250 VAC, 50-60Hz |
| Power Cord | Suited to region | |
| Compliance | CE |
PRODUCT FEATURES
Fast Deposition Rate
Good Film Quality
Process Stability
High Productivity
Fully Automatic
Simple Operation
Plasma
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