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Plasma ashing for photoresist removal
The principle of oxygen plasma ashing for gel removal is to use voltage discharge to ionize oxygen (O2) into excited oxygen atoms (O), and then the oxygen atoms react rapidly with C and H in the resist to generate volatile gases such as CO, CO2, and H2O,
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Plasma ashing for photoresist removal

02

Semiconductor
With high precision simulation, network impedance matching, power drive, power device, radio frequency and the design capabilities of the underlying core algorithm
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Semiconductor
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